advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching characteristics r ds(on) 1.4 simple drive requirement i d 7a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 1.35 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice -55 to 150 18 7 storage temperature range parameter rating 650 + 30 parameter 1 200810023 AP2762R-A-HF -55 to 150 6 24 92.6 halogen-free product g d s a p2762 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. g d s to-262(r) the to-262 package is widely preferred for commercial-industrial applications. the device is suited for switch mode power supplies ,dc-ac converters and high current high speed switching circuits.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3a - - 1.4 ? ,
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP2762R-A-HF 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =3a v g =10v 0 2 4 6 8 10 12 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0 v 0 1 2 3 4 5 6 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g = 5 .0 v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP2762R-A-HF 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =200v 1 10 100 1000 10000 1 5 9 13 17 21 25 29 33 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
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